Good news: New progress in epitaxial deep ultraviolet LED research on graphene
2019-05-12

Deep-UV LEDs can be widely used in the fields of anti-virus, sterilization, printing and communication. The international waterlogging convention has promoted the full application of deep-UV LEDs, but commercialized deep-UV LEDs are less than 10% external quantum efficiency. Limits the use of deep UV LEDs. AlN material quality is one of the core factors of deep ultraviolet LED. AlN film is mainly heteroepitaxially grown on c-sapphire, 6H-SiC and Si(111) substrates by metal organic chemical vapor deposition (MOCVD), AlN. There is a large lattice mismatch and thermal mismatch between the substrate and the substrate, so that there is a large stress and a high dislocation density in the epitaxial layer, which seriously degrades the device performance. At the same time, AlN precursors have higher migration barriers on such substrates, poor wettability, and tend to grow in three-dimensional islands. A certain thickness is required to achieve fusion, which increases the time cost.


Recently, the Lighting Research and Development Center of the Institute of Semiconductors of the Chinese Academy of Sciences, in collaboration with the Nanochemistry Research Center of Peking University and the Liu Zhongfan team of the Beijing Graphene Research Institute, developed a new epitaxial substrate of graphene/sapphire and proposed plasma pretreatment modified graphene. A new strategy to promote the growth of AlN films to achieve deep UV LEDs. It is found by DFT calculation that the pyrrole nitrogen introduced into the graphene by plasma pretreatment can effectively promote the nucleation growth of the AlN film. High-quality AlN films can be obtained in a short period of time with low stress and low dislocation density, and deep-UV LED devices exhibit good device performance. The results were published in Advanced Materials on the subject of Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene (Adv. Mater., DOI: 10.1002/adma.201807345). Researchers Li Jinxi and Wei Tongbo from the Institute of Semiconductors and Liu Zhongfan from Peking University and researcher Gao Peng are co-authors of the paper. Chen Zhaolong and Liu Zhiqiang are the co-first authors of the paper.


At the same time, Wei Tongbo and Liu Zhongfan teamed up to propose a growth model of graphene/NPSS nano-patterned substrate epitaxial AlN. Theoretical calculations and experiments verified the migration law of metal atom migration on graphene surface. Graphene shortened the integration time of AlN on NPSS by three points. Second, while the power of deep ultraviolet LED is significantly improved, the deep ultraviolet light source is expected to become a breakthrough in the industrialization of graphene. The related results were selected as featured articles after the publication of Appl. Phys. Lett. 114, 091107 (2019), and were specifically reported by AIPScilight under the New AlN film growth conditions enhance emission of deep ultraviolet LEDs, and also by the semiconductor field review magazine Compound The Semiconductor magazine edition (No. 3, 2019) and Semiconductor Today are both long-form reports.


At the same time, Wei Tongbo and Liu Zhongfan teamed up to propose a growth model of graphene/NPSS nano-patterned substrate epitaxial AlN. Theoretical calculations and experiments verified the migration law of metal atom migration on graphene surface. Graphene shortened the integration time of AlN on NPSS by three points. Second, while the power of deep ultraviolet LED is significantly improved, the deep ultraviolet light source is expected to become a breakthrough in the industrialization of graphene. The related results were selected as featured articles after the publication of Appl. Phys. Lett. 114, 091107 (2019), and were specifically reported by AIPScilight under the New AlN film growth conditions enhance emission of deep ultraviolet LEDs, and also by the semiconductor field review magazine Compound The Semiconductor magazine edition (No. 3, 2019) and Semiconductor Today are both long-form reports....


The above series of research work has been supported by the National Key Research and Development Program, the National Natural Science Foundation, and the Beijing Natural Science Fund.

好消息:石墨烯上外延深紫外LED研究取得新进展


Source: Semiconductor Research Institute